100W 940nm Vcsel TO-mount Laser Diode

VCSEL devices have two basic structures, one is a top emission structure: it is grown on an n-type GaAs substrate by MOCVD technology, and DBR is used as a laser cavity mirror, and the quantum well active region is sandwiched between n-DBR and p-DBR. between. The other is the bottom emission structure, which is generally used to generate the 976-1064nm band. 

Feature

Microlensed arrays available for higher brightness and narrower divergences

Improved eye-safety from VCSELs over conventional laser diodes

Very low speckle illumination quality

Circular beam for easy coupling

High reliability

Application

3D facial recognition

Augmented reality, 

Automotive in-cabin sensing

Machine vision for autonomous vehicles and robotics.

Date sheet

Item No: TO940VC100

Item Name: 100W 940nm Vcsel TO-mount Laser Diode

Optical	Typical Value
Center Wavelength λ	940nm
Optical Power	100W
Working Mode	QCW
Divergence (FWHM)	23Deg
Pulsed Width	6ns
Frequency	160kHz
Electrical
Threshold Current Lth	0.1A
Operating Current Lop	59A
Operating Voltage Vop	56V
Thermal
Test Temperature	25℃
Storage Temperature	-40~125℃

Drawing:

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