4800W 808nm G-stack Diode Laser

Introducing the G-Stack Diode Laser: a high-power system delivering 4800W of laser energy. With 72 bars in two modules, it operates at 808nm wavelength in QCW mode with a 0.4% duty cycle and 200us pulse width. This precision-engineered laser enables unprecedented power and precision for cutting-edge applications in manufacturing, research, and more. Offering unmatched performance and versatility. Unleash its immense power for enhanced productivity and breakthrough discoveries.

Feature

72bars, 4800W, 808nm wavelength

Fast Axis Divergence 38Deg 

Simple, reliable conduction cooled

Frequency 20Hz, Pulse width 200us, QCW working mode

Application

Diode-Pumped Solid-State 

Defense 

Materials Processing 

Date sheet

Item No: CC808DL4800

Item Name: 4800W 808nm G-stack Diode Laser

Optical
Center Wavelength	808±10nm
Output Power	4800W
Quantity of Bars	72
Working Mode	QCW
Fast Axis Divergence(FWHM)	38De
Slow Axis Divergence(FWHM)	12Deg
Frequency	20Hz
Pulse Width	200us
Duty Cycle	0.4%
Electrical
Operating Current Iop	<80A
Threshold Current Ith	25A
Operating Voltage Vop	144V
Thermal
Test Temperature	25℃
Storage Temperature	0~55℃

Drawing:

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